IRF7832TRPBF vs IRF7862TRPBF Comparison

This in-depth comparison of the IRF7832TRPBF and IRF7862TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF7832TRPBF

+BOM

3081 PCS | Infineon Technologies
IRF7862TRPBF

+BOM

6329 PCS | Infineon Technologies
Package SO-8 SO-8
Description MOSFET N-CH 30V 20A 8SO MOSFET N-CH 30V 21A 8SO
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C 20A (Ta) 21A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 4mOhm @ 20A, 10V 3.7mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.32V @ 250µA 2.35V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 51 nC @ 4.5 V 45 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4310 pF @ 15 V 4090 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Comparison Model : IRF7832TRPBF IRF7862TRPBF

+BOM RFQ