IRF7815TRPBF vs IRF7855TRPBF

This in-depth comparison of the IRF7815TRPBF and IRF7855TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7815TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5071 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7855TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5923 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7815TRPBF	IRF7855TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	60 V
Current - Continuous Drain(Id) @ 25°C	5.1A (Ta)	12A (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	43mOhm @ 3.1A, 10V	9.4mOhm @ 12A, 10V
Vgs(th)(Max) @ Id	5V @ 100µA	4.9V @ 100µA
Gate Charge(Qg)(Max) @ Vgs	38 nC @ 10 V	39 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	1647 pF @ 75 V	1560 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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