IRFB7530PBF vs IRFB7537PBF

This in-depth comparison of the IRFB7530PBF and IRFB7537PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRFB7530PBF

Infineon Technologies

Lifecycle
Active
Stock
4164 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

IRFB7537PBF

Infineon Technologies

Lifecycle
Active
Stock
5640 PCS
Package
TO-220
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB7530PBF IRFB7537PBF
Series HEXFET®, StrongIRFET™ HEXFET®, StrongIRFET™
Part Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C - 173A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 6V, 10V
Rds On(Max) @ Id Vgs - 3.3mOhm @ 100A, 10V
Vgs(th)(Max) @ Id - 3.7V @ 150µA
Gate Charge(Qg)(Max) @ Vgs - 210 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 7020 pF @ 25 V
Power Dissipation (Max) 375W (Tc) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Base Product Number IRFB7530 -
Current - Continuous Drain (Id) @ 25°C 195A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V -
Vgs(th) (Max) @ Id 3.7V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 13703 pF @ 25 V -
Packaging Tube -
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