IRFB7545PBF vs IRFB7730PBF

This in-depth comparison of the IRFB7545PBF and IRFB7730PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRFB7545PBF

Infineon Technologies

Lifecycle
Active
Stock
5827 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFB7730PBF

Infineon Technologies

Lifecycle
Active
Stock
3203 PCS
Package
TO-220-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFB7545PBF IRFB7730PBF
Series HEXFET®, StrongIRFET™ HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 75 V
Current - Continuous Drain(Id) @ 25°C 95A (Tc) 195A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V 6V, 10V
Rds On(Max) @ Id Vgs 5.9mOhm @ 57A, 10V 2.6mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 3.7V @ 100µA 3.7V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V 407 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4010 pF @ 25 V 13660 pF @ 25 V
Power Dissipation (Max) 125W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
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