IRFH7440TRPBF vs IRFH7004TRPBF

This in-depth comparison of the IRFH7440TRPBF and IRFH7004TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRFH7440TRPBF

Infineon Technologies

Lifecycle
Active
Stock
3357 PCS
Package
TDSON-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFH7004TRPBF

International Rectifier

Lifecycle
Active
Stock
3078 PCS
Package
TDSON-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFH7440TRPBF IRFH7004TRPBF
Series HEXFET®, StrongIRFET™ HEXFET®, StrongIRFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain(Id) @ 25°C 85A (Tc) 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V 6V, 10V
Rds On(Max) @ Id Vgs 2.4mOhm @ 50A, 10V 1.4mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 3.9V @ 100µA 3.9V @ 150µA
Gate Charge(Qg)(Max) @ Vgs 138 nC @ 10 V 194 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4574 pF @ 25 V 6419 pF @ 25 V
Power Dissipation (Max) 104W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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