IRFHM792TRPBF vs IRFHM8363TR2PBF

This in-depth comparison of the IRFHM792TRPBF and IRFHM8363TR2PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFHM792TRPBF

Infineon Technologies

Lifecycle
Active
Stock
20 PCS
Package
VDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRFHM8363TR2PBF

Infineon Technologies

Lifecycle
Active
Stock
5878 PCS
Package
VDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFHM792TRPBF IRFHM8363TR2PBF
Supplier Infineon Technologies Infineon Technologies
Part Status Last Time Buy Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 100V 30V
Current - Continuous Drain(Id) @ 25°C 2.3A 11A
Rds On(Max) @ Id Vgs 195mOhm @ 2.9A, 10V 14.9mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 4V @ 10µA 2.35V @ 25µA
Gate Charge(Qg)(Max) @ Vgs 6.3nC @ 10V 15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 251pF @ 25V 1165pF @ 10V
Power - Max 2.3W 2.7W
Mounting Type Surface Mount Surface Mount
Series HEXFET® -
Operating Temperature -55°C ~ 150°C (TJ) -
Compare RFQ