IRFP260MPBF vs IRFP250PBF

This in-depth comparison of the IRFP250PBF and IRFP260MPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFP250PBF

+BOM

1442 PCS | Vishay Siliconix
IRFP260MPBF

+BOM

5964 PCS | Infineon Technologies
Package TO-247-3 TO-247
Description MOSFET N-CH 200V 30A TO247-3 MOSFET N-CH 200V 50A TO247AC
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 200 V 200 V
Current-ContinuousDrain(Id)@25°C 30A (Tc) 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 85mOhm @ 18A, 10V 40mOhm @ 28A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 140 nC @ 10 V 234 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 2800 pF @ 25 V 4057 pF @ 25 V
PowerDissipation(Max) 190W (Tc) 300W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Series - HEXFET®
Comparison Model : IRFP250PBF IRFP260MPBF

+BOM RFQ