IRFP4227PBF vs IRFP4229PBF Comparison
This in-depth comparison of the IRFP4229PBF and IRFP4227PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-247-3
TO-247
Description
IRFP4229 - 12V-300V N-CHANNEL PO
IRFP4227 - 12V-300V N-CHANNEL PO
Series
HEXFET®
HEXFET®
Part Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
200 V
Current - Continuous Drain(Id) @ 25°C
44A (Tc)
65A (Tc)
Drive Voltage(Max Rds On Min Rds On)
10V
10V
Rds On(Max) @ Id Vgs
46mOhm @ 26A, 10V
25mOhm @ 46A, 10V
Vgs(th)(Max) @ Id
5V @ 250µA
5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
110 nC @ 10 V
98 nC @ 10 V
Vgs(Max)
±30V
±30V
Input Capacitance(Ciss)(Max) @ Vds
4560 pF @ 25 V
4600 pF @ 25 V
Power Dissipation (Max)
310W (Tc)
330W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Through Hole
