IRFP4568PBF vs IRFP4310ZPBF

This in-depth comparison of the IRFP4568PBF and IRFP4310ZPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4568PBF

Infineon Technologies

Lifecycle: Active
Stock: 7712 PCS
Package: TO-247
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFP4310ZPBF

Infineon Technologies

Lifecycle: Active
Stock: 3590 PCS
Package: TO-247-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP4568PBF	IRFP4310ZPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V	100 V
Current - Continuous Drain(Id) @ 25°C	171A (Tc)	120A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	5.9mOhm @ 103A, 10V	6mOhm @ 75A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA	4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs	227 nC @ 10 V	170 nC @ 10 V
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	10470 pF @ 50 V	6860 pF @ 50 V
Power Dissipation (Max)	517W (Tc)	280W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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