IRFP4368PBF vs IRFP460

This in-depth comparison of the IRFP4368PBF and IRFP460 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4368PBF

International Rectifier

Lifecycle: Active
Stock: 2190 PCS
Package: TO-247
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFP460

STMicroelectronics

Lifecycle: Active
Stock: 6198 PCS
Package: TO-247-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP4368PBF	IRFP460
Series	HEXFET®	PowerMESH™ II
Part Status	Active	Obsolete
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V	500 V
Current - Continuous Drain(Id) @ 25°C	195A (Tc)	18.4A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	1.85mOhm @ 195A, 10V	270mOhm @ 9A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	570 nC @ 10 V	128 nC @ 10 V
Vgs(Max)	±20V	±30V
Input Capacitance(Ciss)(Max) @ Vds	19230 pF @ 50 V	2980 pF @ 25 V
Power Dissipation (Max)	520W (Tc)	220W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole

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