IRFP4668PBF vs IRFP450PBF

This in-depth comparison of the IRFP4668PBF and IRFP450PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFP4668PBF

Infineon Technologies

Lifecycle: Active
Stock: 6039 PCS
Package: TO-247
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFP450PBF

Vishay

Lifecycle: Active
Stock: 6703 PCS
Package: TO-247-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFP4668PBF	IRFP450PBF
Series	HEXFET®	-
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	500 V
Current - Continuous Drain(Id) @ 25°C	130A (Tc)	14A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	9.7mOhm @ 81A, 10V	400mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	241 nC @ 10 V	150 nC @ 10 V
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	10720 pF @ 50 V	2600 pF @ 25 V
Power Dissipation (Max)	520W (Tc)	190W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole

Compare RFQ