IRFR5410PBF vs IRFR5305PBF

This in-depth comparison of the IRFR5410PBF and IRFR5305PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRFR5410PBF

Infineon Technologies

Lifecycle
Active
Stock
7061 PCS
Package
TO-252-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

IRFR5305PBF

Infineon Technologies

Lifecycle
Active
Stock
6395 PCS
Package
TO-252-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRFR5410PBF IRFR5305PBF
Series HEXFET® HEXFET®
Part Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 55 V
Current - Continuous Drain(Id) @ 25°C 13A (Tc) 31A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 205mOhm @ 7.8A, 10V 65mOhm @ 16A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 58 nC @ 10 V 63 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 760 pF @ 25 V 1200 pF @ 25 V
Power Dissipation (Max) 66W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
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