IRG4PF50WPBF vs IRG4P254SPBF

This in-depth comparison of the IRG4PF50WPBF and IRG4P254SPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRG4PF50WPBF

Infineon Technologies

Lifecycle: Active
Stock: 7350 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

Part B

IRG4P254SPBF

Infineon Technologies

Lifecycle: Active
Stock: 4025 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRG4PF50WPBF	IRG4P254SPBF
Supplier	-	Infineon Technologies
Part Status	Obsolete	Obsolete
Voltage - Collector Emitter Breakdown(Max)	900 V	250 V
Current - Collector(Ic)(Max)	51 A	98 A
Current - Collector Pulsed(Icm)	204 A	196 A
Vce(on)(Max) @ Vge Ic	2.7V @ 15V, 28A	1.5V @ 15V, 55A
Power - Max	200 W	200 W
Switching Energy	190µJ (on), 1.06mJ (off)	380µJ (on), 3.5mJ (off)
Input Type	Standard	Standard
Gate Charge	160 nC	200 nC
Td(on / off) @ 25°C	29ns/110ns	40ns/270ns
Test Condition	720V, 28A, 5Ohm, 15V	200V, 55A, 5Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole

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