IRG4PH50UDPBF vs IRG4PF50WPBF

This in-depth comparison of the IRG4PH50UDPBF and IRG4PF50WPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRG4PH50UDPBF

Infineon Technologies

Lifecycle: Active
Stock: 6128 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

Part B

IRG4PF50WPBF

Infineon Technologies

Lifecycle: Active
Stock: 7350 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRG4PH50UDPBF	IRG4PF50WPBF
Part Status	Obsolete	Obsolete
Voltage - Collector Emitter Breakdown(Max)	1200 V	900 V
Current - Collector(Ic)(Max)	45 A	51 A
Current - Collector Pulsed(Icm)	180 A	204 A
Vce(on)(Max) @ Vge Ic	3.7V @ 15V, 24A	2.7V @ 15V, 28A
Power - Max	200 W	200 W
Switching Energy	2.1mJ (on), 1.5mJ (off)	190µJ (on), 1.06mJ (off)
Input Type	Standard	Standard
Gate Charge	160 nC	160 nC
Td(on / off) @ 25°C	47ns/110ns	29ns/110ns
Test Condition	800V, 24A, 5Ohm, 15V	720V, 28A, 5Ohm, 15V
Reverse Recovery Time (trr)	90 ns	-
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole

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