IRGP4063DPBF vs IRGP4055DPBF

This in-depth comparison of the IRGP4063DPBF and IRGP4055DPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRGP4063DPBF

Infineon Technologies

Lifecycle: Active
Stock: 7512 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

Part B

IRGP4055DPBF

Infineon Technologies

Lifecycle: Active
Stock: 9198 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRGP4063DPBF	IRGP4055DPBF
Supplier	-	Infineon Technologies
Part Status	Obsolete	Obsolete
IGBT Type	Trench	Trench
Voltage - Collector Emitter Breakdown(Max)	600 V	300 V
Current - Collector(Ic)(Max)	96 A	110 A
Vce(on)(Max) @ Vge Ic	2.14V @ 15V, 48A	2.1V @ 15V, 110A
Power - Max	330 W	255 W
Input Type	Standard	Standard
Gate Charge	95 nC	132 nC
Td(on / off) @ 25°C	60ns/145ns	44ns/245ns
Reverse Recovery Time (trr)	115 ns	27 ns
Operating Temperature	-55°C ~ 175°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Current - Collector Pulsed(Icm)	144 A	-
Switching Energy	625µJ (on), 1.28mJ (off)	-
Test Condition	400V, 48A, 10Ohm, 15V	-

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