IRGP4066DPBF vs IRGP4063D1-EPBF

This in-depth comparison of the IRGP4066DPBF and IRGP4063D1-EPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRGP4066DPBF

Infineon Technologies

Lifecycle: Active
Stock: 7138 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

Part B

IRGP4063D1-EPBF

Infineon Technologies

Lifecycle: Active
Stock: 2240 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRGP4066DPBF	IRGP4063D1-EPBF
Supplier	-	Infineon Technologies,Rochester Electronics, LLC
Part Status	Obsolete	Obsolete
Voltage - Collector Emitter Breakdown(Max)	600 V	600 V
Current - Collector(Ic)(Max)	140 A	100 A
Current - Collector Pulsed(Icm)	225 A	192 A
Vce(on)(Max) @ Vge Ic	2.1V @ 15V, 75A	2.14V @ 15V, 48A
Power - Max	454 W	330 W
Switching Energy	2.47mJ (on), 2.16mJ (off)	1.4mJ (on), 1.1mJ (off)
Input Type	Standard	Standard
Gate Charge	150 nC	150 nC
Td(on / off) @ 25°C	50ns/200ns	60ns/160ns
Test Condition	400V, 75A, 10Ohm, 15V	400V, 48A, 10Ohm, 15V
Reverse Recovery Time (trr)	155 ns	80 ns
Operating Temperature	-55°C ~ 175°C (TJ)	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole
IGBT Type	Trench	-

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