IRLML0030TRPBF vs IRLML6402TRPBF Comparison

This in-depth comparison of the IRLML6402TRPBF and IRLML0030TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRLML6402TRPBF

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3910 PCS | Infineon Technologies
IRLML0030TRPBF

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4058 PCS | Infineon Technologies
Package SOT-23
Description MOSFET P-CH 20V 3.7A SOT23 MOSFET N-CH 30V 5.3A SOT23
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
Base Product Number IRLML6402 -
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
Current - Continuous Drain(Id) @ 25°C - 5.3A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 27mOhm @ 5.2A, 10V
Vgs(th)(Max) @ Id - 2.3V @ 25µA
Gate Charge(Qg)(Max) @ Vgs - 2.6 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 382 pF @ 15 V
Comparison Model : IRLML6402TRPBF IRLML0030TRPBF

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