IRLML0100TRPBF vs IRLML2030TRPBF

This in-depth comparison of the IRLML0100TRPBF and IRLML2030TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML0100TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2453 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRLML2030TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 4830 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRLML0100TRPBF	IRLML2030TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	30 V
Current - Continuous Drain(Id) @ 25°C	1.6A (Ta)	2.7A (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	220mOhm @ 1.6A, 10V	100mOhm @ 2.7A, 10V
Vgs(th)(Max) @ Id	2.5V @ 25µA	2.3V @ 25µA
Gate Charge(Qg)(Max) @ Vgs	2.5 nC @ 4.5 V	1 nC @ 4.5 V
Vgs(Max)	±16V	±20V
Input Capacitance(Ciss)(Max) @ Vds	290 pF @ 25 V	110 pF @ 15 V
Power Dissipation (Max)	1.3W (Ta)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ