IRLML2244TRPBF vs IRLML6344TRPBF

This in-depth comparison of the IRLML2244TRPBF and IRLML6344TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML2244TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3546 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRLML6344TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5999 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRLML2244TRPBF	IRLML6344TRPBF
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Active
FET Type	P-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	30 V
Current - Continuous Drain(Id) @ 25°C	-	5A (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	2.5V, 4.5V
Rds On(Max) @ Id Vgs	-	29mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id	-	1.1V @ 10µA
Gate Charge(Qg)(Max) @ Vgs	-	6.8 nC @ 4.5 V
Vgs(Max)	-	±12V
Input Capacitance(Ciss)(Max) @ Vds	-	650 pF @ 25 V
Power Dissipation (Max)	1.3W (Ta)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	IRLML2244	-
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	-
Rds On (Max) @ Id, Vgs	54mOhm @ 4.3A, 4.5V	-
Vgs(th) (Max) @ Id	1.1V @ 10µA	-
Gate Charge (Qg) (Max) @ Vgs	6.9 nC @ 4.5 V	-
Vgs (Max)	±12V	-
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 16 V	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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