IRLML5203TRPBF vs IRLML6344TRPBF

This in-depth comparison of the IRLML5203TRPBF and IRLML6344TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML5203TRPBF

Infineon Technologies

Lifecycle
Active
Stock
4490 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

IRLML6344TRPBF

Infineon Technologies

Lifecycle
Active
Stock
5999 PCS
Package
SOT-23
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRLML5203TRPBF IRLML6344TRPBF
Series HEXFET® HEXFET®
Part Status Last Time Buy Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C - 5A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 2.5V, 4.5V
Rds On(Max) @ Id Vgs - 29mOhm @ 5A, 4.5V
Vgs(th)(Max) @ Id - 1.1V @ 10µA
Gate Charge(Qg)(Max) @ Vgs - 6.8 nC @ 4.5 V
Vgs(Max) - ±12V
Input Capacitance(Ciss)(Max) @ Vds - 650 pF @ 25 V
Power Dissipation (Max) 1.25W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRLML5203 -
Current - Continuous Drain (Id) @ 25°C 3A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 98mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 2.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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