IRLML6302TRPBF vs IRLML2030TRPBF

This in-depth comparison of the IRLML6302TRPBF and IRLML2030TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML6302TRPBF

Infineon Technologies

Lifecycle
Active
Stock
5057 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

IRLML2030TRPBF

Infineon Technologies

Lifecycle
Active
Stock
4830 PCS
Package
SOT-23
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRLML6302TRPBF IRLML2030TRPBF
Series HEXFET® HEXFET®
Part Status Obsolete Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain(Id) @ 25°C - 2.7A (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 100mOhm @ 2.7A, 10V
Vgs(th)(Max) @ Id - 2.3V @ 25µA
Gate Charge(Qg)(Max) @ Vgs - 1 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 110 pF @ 15 V
Power Dissipation (Max) 540mW (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number IRLML6302 -
Current - Continuous Drain (Id) @ 25°C 780mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V -
Rds On (Max) @ Id, Vgs 600mOhm @ 610mA, 4.5V -
Vgs(th) (Max) @ Id 1.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 3.6 nC @ 4.45 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 15 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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