IRLML6402TRPBF vs IRLML6302TRPBF

This in-depth comparison of the IRLML6402TRPBF and IRLML6302TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRLML6402TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 3910 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

Part B

IRLML6302TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5057 PCS
Series: Transistors - FETs, MOSFETs - Single FETs, MOSFETs

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRLML6402TRPBF	IRLML6302TRPBF
Series	HEXFET®	HEXFET®
Part Status	Last Time Buy	Obsolete
Base Product Number	IRLML6402	IRLML6302
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	20 V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)	780mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	2.7V, 4.5V
Rds On (Max) @ Id, Vgs	65mOhm @ 3.7A, 4.5V	600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V	3.6 nC @ 4.45 V
Vgs (Max)	±12V	±12V
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 10 V	97 pF @ 15 V
Power Dissipation (Max)	1.3W (Ta)	540mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Packaging	Cut Tape (CT), Tape & Reel (TR)	Cut Tape (CT), Tape & Reel (TR)

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