IXDN602SIA vs IXDN602SITR

This in-depth comparison of the IXDN602SIA and IXDN602SITR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IXDN602SIA

IXYS Integrated Circuits Division

Lifecycle: Active
Stock: 1223 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

IXDN602SITR

IXYS Integrated Circuits Division

Lifecycle: Active
Stock: 3358 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IXDN602SIA	IXDN602SITR
Part Status	Active	Active
Driven Configuration	Low-Side	Low-Side
Channel Type	Independent	Independent
Number of Drivers	2	2
Gate Type	IGBT, N-Channel, P-Channel MOSFET	IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply	4.5V ~ 35V	4.5V ~ 35V
Logic Voltage - VILVIH	0.8V, 3V	0.8V, 3V
Current - Peak Output(Source Sink)	2A, 2A	2A, 2A
Input Type	Non-Inverting	Non-Inverting
Rise / Fall Time(Typ)	7.5ns, 6.5ns	7.5ns, 6.5ns
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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