LM358BAIDR vs LM358DG

This in-depth comparison of the LM358BAIDR and LM358DG provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

LM358BAIDR

Texas Instruments

Lifecycle
Active
Stock
2857 PCS
Series
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
+BOM RFQ
Part B

LM358DG

onsemi

Lifecycle
Active
Stock
9337 PCS
Package
SOIC-8
Series
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification LM358BAIDR LM358DG
Supplier - Rochester Electronics, LLC,onsemi
Part Status Active Obsolete
Amplifier Type General Purpose General Purpose
Number of Circuits 2 2
Gain Bandwidth Product 1.2 MHz 1 MHz
Current - Input Bias 10 nA 45 nA
Voltage - Input Offset 2 mV 2 mV
Supply Current 300µA (x2 Channels) 800µA (x2 Channels)
Current - Output / Channel 40 mA 40 mA
Voltage - Supply Span(Min) 3 V 3 V
Voltage - Supply Span(Max) 36 V 32 V
Operating Temperature -40°C ~ 125°C (TA) 0°C ~ 70°C
Mounting Type Surface Mount Surface Mount
Slew Rate 0.5V/µs -
Compare RFQ