LT1013DDR vs LT1012S8#TR Comparison

This in-depth comparison of the LT1013DDR and LT1012S8#TR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
LT1013DDR

+BOM

4759 PCS | Texas Instruments
LT1012S8#TR

+BOM

9060 PCS | Analog Devices Inc.
Package SOIC-8
Description IC OPAMP GP 1 CIRCUIT 8SO
Supplier - Analog Devices Inc.
Part Status Active Active
Amplifier Type General Purpose General Purpose
Number of Circuits 2 1
Slew Rate 0.4V/µs 0.2V/µs
Current - Input Bias 18 nA 25 pA
Voltage - Input Offset 90 µV 8 µV
Supply Current 320µA (x2 Channels) 380µA
Voltage - Supply Span(Min) 5 V 2.4 V
Voltage - Supply Span(Max) 30 V 40 V
Operating Temperature 0°C ~ 70°C (TA) 0°C ~ 70°C
Mounting Type Surface Mount Surface Mount
Gain Bandwidth Product 1 MHz -
Comparison Model : LT1013DDR LT1012S8#TR

+BOM RFQ