MC33151DR2G vs MC33178D

This in-depth comparison of the MC33151DR2G and MC33178D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MC33151DR2G

onsemi

Lifecycle: Active
Stock: 6915 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

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Part B

MC33178D

onsemi

Lifecycle: Active
Stock: 5917 PCS
Package: SOIC-8
Series: Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	MC33151DR2G	MC33178D
Supplier	-	Rochester Electronics, LLC
Part Status	Active	Obsolete
Amplifier Type	-	General Purpose
Number of Circuits	-	2
Slew Rate	-	2V/µs
Gain Bandwidth Product	-	5 MHz
Current - Input Bias	-	100 nA
Voltage - Input Offset	-	150 µV
Supply Current	-	1.7mA (x2 Channels)
Current - Output / Channel	-	100 mA
Voltage - Supply Span(Min)	-	4 V
Voltage - Supply Span(Max)	-	36 V
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Surface Mount
Driven Configuration	Low-Side	-
Channel Type	Independent	-
Number of Drivers	2	-
Gate Type	N-Channel MOSFET	-
Voltage - Supply	6.5V ~ 18V	-
Logic Voltage - VILVIH	0.8V, 2.6V	-
Current - Peak Output(Source Sink)	1.5A, 1.5A	-
Input Type	Inverting	-
Rise / Fall Time(Typ)	31ns, 32ns	-

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