MC33153DR2G vs MC33151DR2

This in-depth comparison of the MC33153DR2G and MC33151DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

MC33153DR2G

onsemi

Lifecycle
Active
Stock
3220 PCS
Package
SOIC-8
Series
PMIC - Gate Drivers
+BOM RFQ
Part B

MC33151DR2

onsemi

Lifecycle
Active
Stock
8694 PCS
Package
SOIC-8
Series
PMIC - Gate Drivers
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MC33153DR2G MC33151DR2
Part Status Active Obsolete
Driven Configuration Low-Side Low-Side
Channel Type Single Independent
Number of Drivers 1 2
Gate Type IGBT, N-Channel MOSFET N-Channel MOSFET
Voltage - Supply 11V ~ 20V 6.5V ~ 18V
Logic Voltage - VILVIH 1.2V, 3.2V 0.8V, 2.6V
Current - Peak Output(Source Sink) 1A, 2A 1.5A, 1.5A
Input Type Inverting Inverting
Rise / Fall Time(Typ) 17ns, 17ns 31ns, 32ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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