MC33179DR2G vs MC33152DR2G

This in-depth comparison of the MC33179DR2G and MC33152DR2G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MC33179DR2G

onsemi

Lifecycle
Active
Stock
4448 PCS
Series
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
+BOM RFQ
Part B

MC33152DR2G

onsemi

Lifecycle
Active
Stock
6426 PCS
Package
SOIC-8
Series
PMIC - Gate Drivers
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MC33179DR2G MC33152DR2G
Part Status Active Active
Driven Configuration - Low-Side
Channel Type - Independent
Number of Drivers - 2
Gate Type - N-Channel MOSFET
Voltage - Supply - 6.1V ~ 18V
Logic Voltage - VILVIH - 0.8V, 2.6V
Current - Peak Output(Source Sink) - 1.5A, 1.5A
Input Type - Non-Inverting
Rise / Fall Time(Typ) - 36ns, 32ns
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Amplifier Type General Purpose -
Number of Circuits 4 -
Slew Rate 2V/µs -
Gain Bandwidth Product 5 MHz -
Current - Input Bias 100 nA -
Voltage - Input Offset 150 µV -
Supply Current 1.7mA (x4 Channels) -
Current - Output / Channel 100 mA -
Voltage - Supply Span(Min) 4 V -
Voltage - Supply Span(Max) 36 V -
Compare RFQ