MCP6567T-E/SN vs MCP652T-E/SNVAO

This in-depth comparison of the MCP6567T-E/SN and MCP652T-E/SNVAO provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MCP6567T-E/SN

Microchip Technology

Lifecycle
Active
Stock
2295 PCS
Package
SOIC-8
Series
Linear - Comparators
Part B

MCP652T-E/SNVAO

Microchip Technology

Lifecycle
Active
Stock
4053 PCS
Package
SOIC-8
Series
Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MCP6567T-E/SN MCP652T-E/SNVAO
Supplier - Microchip Technology
Part Status Active Active
Amplifier Type - General Purpose
Number of Circuits - 2
Output Type CMOS, Open-Drain Rail-to-Rail
Slew Rate - 30V/µs
Gain Bandwidth Product - 50 MHz
Current - Input Bias - 6 pA
Voltage - Input Offset - 200 µV
Supply Current - 6mA (x2 Channels)
Current - Output / Channel - 100 mA
Voltage - Supply Span(Min) - 2.5 V
Voltage - Supply Span(Max) - 5.5 V
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount
Type General Purpose -
Number of Elements 2 -
Voltage - Supply, Single/Dual (±) 1.8V ~ 5.5V -
Voltage - Input Offset (Max) 10mV @ 5.5V -
Current - Input Bias(Max) 1pA @ 5.5V -
Current - Output (Typ) 50mA -
Current - Quiescent (Max) 130µA -
CMRRPSRR(Typ) 66dB CMRR, 70dB PSRR -
Propagation Delay(Max) 80ns -
Hysteresis 5mV -