MMBFJ108 vs MMBFJ202
This in-depth comparison of the MMBFJ202 and MMBFJ108 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
TO-236-3
TO-236-3
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
JFET N-CH 25V 350MW SSOT3
Supplier
Rochester Electronics, LLC
onsemi
ProductStatus
Active
Active
FETType
N-Channel
N-Channel
Voltage-Breakdown(V(BR)GSS)
40 V
25 V
Current-Drain(Idss)@Vds(Vgs=0)
900 µA @ 20 V
80 mA @ 15 V
Voltage-Cutoff(VGSoff)@Id
800 mV @ 10 nA
3 V @ 10 nA
Power-Max
350 mW
350 mW
OperatingTemperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
MountingType
Surface Mount
Surface Mount
Resistance-RDS(On)
-
8 Ohms
