MMBFJ112 vs MMBFJ177LT1G

This in-depth comparison of the MMBFJ112 and MMBFJ177LT1G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MMBFJ112

onsemi

Lifecycle
Active
Stock
3055 PCS
Package
SOT-23-3
Series
Transistors - JFETs
+BOM RFQ
Part B

MMBFJ177LT1G

onsemi

Lifecycle
Active
Stock
4949 PCS
Package
SOT-23-3
Series
Transistors - JFETs
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBFJ112 MMBFJ177LT1G
Part Status Active Active
FET Type N-Channel P-Channel
Voltage - Breakdown(V(BR)GSS) 35 V 30 V
Current - Drain(Idss) @ Vds(Vgs=0) 5 mA @ 15 V 1.5 mA @ 15 V
Voltage - Cutoff(VG Soff) @ Id 1 V @ 1 µA 800 mV @ 10 nA
Rds On 50 Ohms 300 Ohms
Power - Max 350 mW 225 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Input Capacitance(Ciss)(Max) @ Vds - 11pF @ 10V (VGS)
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