MMBFJ309LT1G vs MMBFJ175

This in-depth comparison of the MMBFJ309LT1G and MMBFJ175 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MMBFJ309LT1G

onsemi

Lifecycle
Active
Stock
3774 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - RF
+BOM RFQ
Part B

MMBFJ175

onsemi

Lifecycle
Active
Stock
4879 PCS
Package
TO-236-3
Series
Transistors - JFETs
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBFJ309LT1G MMBFJ175
Supplier - onsemi,Flip Electronics
Part Status Active Obsolete
FET Type - P-Channel
Voltage - Breakdown(V(BR)GSS) - 30 V
Current - Drain(Idss) @ Vds(Vgs=0) - 7 mA @ 15 V
Voltage - Cutoff(VG Soff) @ Id - 3 V @ 10 nA
Rds On - 125 Ohms
Power - Max - 225 mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Transistor Type N-Channel JFET -
Current Rating (Amps) 30mA -
Voltage - Rated 25 V -
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