MMBT3906LT1 vs MMBT3640

This in-depth comparison of the MMBT3906LT1 and MMBT3640 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MMBT3906LT1

onsemi

Lifecycle
Active
Stock
2079 PCS
Package
TO-236-3
Series
Transistors - Bipolar (BJT) - Single
Part B

MMBT3640

onsemi

Lifecycle
Active
Stock
22607 PCS
Package
TO-236-3
Series
Transistors - Bipolar (BJT) - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT3906LT1 MMBT3640
Supplier Rochester Electronics, LLC onsemi
Part Status Obsolete Obsolete
Transistor Type PNP PNP
Current - Collector(Ic)(Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown(Max) 40 V 12 V
Vce Saturation(Max) @ Ib Ic 400mV @ 5mA, 50mA 600mV @ 5mA, 50mA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 10mA, 1V 30 @ 10mA, 300mV
Power - Max 225 mW 225 mW
Frequency - Transition 250MHz 500MHz
Mounting Type Surface Mount Surface Mount
Current - Collector Cutoff(Max) - 10nA
Operating Temperature - -55°C ~ 150°C (TJ)