MRF5812GR1 vs MRF5812G

This in-depth comparison of the MRF5812GR1 and MRF5812G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

MRF5812GR1

Microsemi Corporation

Lifecycle
Active
Stock
5446 PCS
Package
SOIC-8
Series
Transistors - Bipolar (BJT) - RF
+BOM RFQ
Part B

MRF5812G

Microsemi Corporation

Lifecycle
Active
Stock
7617 PCS
Package
SOIC-8
Series
Transistors - Bipolar (BJT) - RF
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MRF5812GR1 MRF5812G
Supplier - Microchip Technology
Part Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown(Max) 15V 15V
Frequency - Transition 5GHz 5GHz
Noise Figure(d B Typ @ f) 2dB ~ 3dB @ 500MHz 2dB ~ 3dB @ 500MHz
Gain 13dB ~ 15.5dB 13dB ~ 15.5dB
Power - Max 1.25W 1.25W
DC Current Gain(h FE)(Min) @ Ic Vce 50 @ 50mA, 5V 50 @ 50mA, 5V
Current - Collector(Ic)(Max) 200mA 200mA
Mounting Type Surface Mount Surface Mount
Compare RFQ