MUN5111T1G vs MUN5114T1

This in-depth comparison of the MUN5111T1G and MUN5114T1 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

MUN5111T1G

onsemi

Lifecycle
Active
Stock
2851 PCS
Package
SC-70
Series
Transistors - Bipolar (BJT) - Single, Pre-Biased
+BOM RFQ
Part B

MUN5114T1

onsemi

Lifecycle
Active
Stock
4158 PCS
Series
Transistors - Bipolar (BJT) - Single, Pre-Biased
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MUN5111T1G MUN5114T1
Supplier - onsemi
Part Status Active Obsolete
Transistor Type PNP - Pre-Biased -
Current - Collector(Ic)(Max) 100 mA -
Voltage - Collector Emitter Breakdown(Max) 50 V -
Resistor - Base(R1) 10 kOhms -
Resistor - Emitter Base(R2) 10 kOhms -
DC Current Gain(h FE)(Min) @ Ic Vce 35 @ 5mA, 10V -
Vce Saturation(Max) @ Ib Ic 250mV @ 300µA, 10mA -
Current - Collector Cutoff(Max) 500nA -
Power - Max 202 mW -
Mounting Type Surface Mount -
Compare RFQ