NCP3420DR2G vs NCP3418D

This in-depth comparison of the NCP3420DR2G and NCP3418D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
NCP3420DR2G

+BOM

3022 PCS | onsemi
NCP3418D

+BOM

9018 PCS | onsemi
Package SOIC-8 SOIC-8
Description IC GATE DRVR HALF-BRIDGE 8SOIC HALF BRIDGE BASED MOSFET DRIVER
ProductStatus Active Active
DrivenConfiguration Half-Bridge -
ChannelType Synchronous -
NumberofDrivers 2 -
GateType N-Channel MOSFET -
Voltage-Supply 4.6V ~ 13.2V -
LogicVoltage-VILVIH 0.8V, 2V -
InputType Non-Inverting -
HighSideVoltage-Max(Bootstrap) 35 V -
Rise/FallTime(Typ) 16ns, 11ns -
OperatingTemperature 0°C ~ 150°C (TJ) -
MountingType Surface Mount -
Comparison Model : NCP3420DR2G NCP3418D

+BOM RFQ