NCP5106BDR2G vs NCP5162DR2

This in-depth comparison of the NCP5106BDR2G and NCP5162DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCP5106BDR2G

onsemi

Lifecycle
Active
Stock
5795 PCS
Package
SOIC-8
Series
PMIC - Gate Drivers
+BOM RFQ
Part B

NCP5162DR2

onsemi

Lifecycle
Active
Stock
2613 PCS
Package
SOIC-16
Series
PMIC - Voltage Regulators - DC DC Switching Controllers
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification NCP5106BDR2G NCP5162DR2
Supplier - onsemi,Rochester Electronics, LLC
Part Status Active Obsolete
Output Type - Transistor Driver
Function - Step-Down
Output Configuration - Positive
Topology - Buck
Number of Outputs - 1
Output Phases - 1
Voltage - Supply (Vcc/Vdd) - 8.8V ~ 18V
Duty Cycle(Max) - 100%
Synchronous Rectifier - Yes
Clock Sync - No
Control Features - Enable, Soft Start
Operating Temperature -40°C ~ 125°C (TJ) 0°C ~ 70°C (TA)
Mounting Type Surface Mount Surface Mount
Driven Configuration Half-Bridge -
Channel Type Independent -
Number of Drivers 2 -
Gate Type IGBT, N-Channel MOSFET -
Voltage - Supply 10V ~ 20V -
Logic Voltage - VILVIH 0.8V, 2.3V -
Current - Peak Output(Source Sink) 250mA, 500mA -
Input Type Non-Inverting -
High Side Voltage - Max(Bootstrap) 600 V -
Rise / Fall Time(Typ) 85ns, 35ns -
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