NCV33072DR2G vs NCV33152DR2 Comparison

This in-depth comparison of the NCV33072DR2G and NCV33152DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
NCV33072DR2G

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3713 PCS | onsemi
NCV33152DR2

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4867 PCS | onsemi
Package SOIC-8
Description IC GATE DRVR LOW-SIDE 8SOIC
Part Status Active Obsolete
Driven Configuration - Low-Side
Channel Type - Independent
Number of Drivers - 2
Gate Type - N-Channel MOSFET
Voltage - Supply - 6.1V ~ 18V
Logic Voltage - VILVIH - 0.8V, 2.6V
Current - Peak Output(Source Sink) - 1.5A, 1.5A
Input Type - Non-Inverting
Rise / Fall Time(Typ) - 36ns, 32ns
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Amplifier Type J-FET -
Number of Circuits 2 -
Slew Rate 13V/µs -
Gain Bandwidth Product 4.5 MHz -
Current - Input Bias 100 nA -
Voltage - Input Offset 1 mV -
Supply Current 1.9mA (x2 Channels) -
Current - Output / Channel 30 mA -
Voltage - Supply Span(Min) 3 V -
Voltage - Supply Span(Max) 44 V -
Comparison Model : NCV33072DR2G NCV33152DR2

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