NCV33202VDR2G vs NCV33152DR2

This in-depth comparison of the NCV33202VDR2G and NCV33152DR2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

NCV33202VDR2G

onsemi

Lifecycle: Active
Stock: 6812 PCS
Package: SOIC-8
Series: Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps

+BOM RFQ

Part B

NCV33152DR2

onsemi

Lifecycle: Active
Stock: 4867 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	NCV33202VDR2G	NCV33152DR2
Part Status	Active	Obsolete
Driven Configuration	-	Low-Side
Channel Type	-	Independent
Number of Drivers	-	2
Gate Type	-	N-Channel MOSFET
Voltage - Supply	-	6.1V ~ 18V
Logic Voltage - VILVIH	-	0.8V, 2.6V
Current - Peak Output(Source Sink)	-	1.5A, 1.5A
Input Type	-	Non-Inverting
Rise / Fall Time(Typ)	-	36ns, 32ns
Operating Temperature	-55°C ~ 125°C	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Series	Automotive, AEC-Q100	-
Amplifier Type	General Purpose	-
Number of Circuits	2	-
Output Type	Rail-to-Rail	-
Slew Rate	1V/µs	-
Gain Bandwidth Product	2.2 MHz	-
Current - Input Bias	80 nA	-
Voltage - Input Offset	8 mV	-
Supply Current	900µA (x2 Channels)	-
Current - Output / Channel	80 mA	-
Voltage - Supply Span(Min)	1.8 V	-
Voltage - Supply Span(Max)	12 V	-

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