SBC846BWT1G vs SBC847CDW1T1

This in-depth comparison of the SBC846BWT1G and SBC847CDW1T1 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SBC846BWT1G

onsemi

Lifecycle
Active
Stock
4193 PCS
Package
SOT-323
Series
Transistors - Bipolar (BJT) - Single
Part B

SBC847CDW1T1

onsemi

Lifecycle
Active
Stock
3768 PCS
Series
Linear - Amplifiers - Special Purpose

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SBC846BWT1G SBC847CDW1T1
Supplier - Rochester Electronics, LLC
Part Status Active Active
Series Automotive, AEC-Q101 -
Transistor Type NPN -
Current - Collector(Ic)(Max) 100 mA -
Voltage - Collector Emitter Breakdown(Max) 65 V -
Vce Saturation(Max) @ Ib Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff(Max) 15nA (ICBO) -
DC Current Gain(h FE)(Min) @ Ic Vce 200 @ 2mA, 5V -
Power - Max 150 mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -