SI2301CDS-T1-E3 vs SI2301-TP

This in-depth comparison of the SI2301CDS-T1-E3 and SI2301-TP provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SI2301CDS-T1-E3

Vishay Siliconix

Lifecycle: Active
Stock: 2959 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

SI2301-TP

Micro Commercial Co

Lifecycle: Active
Stock: 3274 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	SI2301CDS-T1-E3	SI2301-TP
Series	TrenchFET®	-
Part Status	Active	Active
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	20 V
Current - Continuous Drain(Id) @ 25°C	3.1A (Tc)	2.8A (Ta)
Drive Voltage(Max Rds On Min Rds On)	2.5V, 4.5V	2.5V, 4.5V
Rds On(Max) @ Id Vgs	112mOhm @ 2.8A, 4.5V	120mOhm @ 2.8A, 4.5V
Vgs(th)(Max) @ Id	1V @ 250µA	1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	10 nC @ 4.5 V	14.5 nC @ 4.5 V
Vgs(Max)	±8V	±8V
Input Capacitance(Ciss)(Max) @ Vds	405 pF @ 10 V	880 pF @ 6 V
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)	1.25W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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