SI2302CDS-T1-E3 vs SI2302DDS-T1-GE3

This in-depth comparison of the SI2302CDS-T1-E3 and SI2302DDS-T1-GE3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

SI2302CDS-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
5255 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

SI2302DDS-T1-GE3

Vishay Siliconix

Lifecycle
Active
Stock
4873 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification SI2302CDS-T1-E3 SI2302DDS-T1-GE3
Series TrenchFET® TrenchFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain(Id) @ 25°C 2.6A (Ta) 2.9A (Tj)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On(Max) @ Id Vgs 57mOhm @ 3.6A, 4.5V 57mOhm @ 3.6A, 4.5V
Vgs(th)(Max) @ Id 850mV @ 250µA 850mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 5.5 nC @ 4.5 V 5.5 nC @ 4.5 V
Vgs(Max) ±8V ±8V
Power Dissipation (Max) 710mW (Ta) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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