SI2305-TP vs SI2304DDS-T1-GE3

This in-depth comparison of the SI2305-TP and SI2304DDS-T1-GE3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

SI2305-TP

Micro Commercial Co

Lifecycle: Active
Stock: 6247 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

SI2304DDS-T1-GE3

Vishay Siliconix

Lifecycle: Active
Stock: 5788 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	SI2305-TP	SI2304DDS-T1-GE3
Series	-	TrenchFET®
Part Status	Active	Active
FET Type	P-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V	30 V
Current - Continuous Drain(Id) @ 25°C	4.1A (Ta)	3.3A (Ta), 3.6A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V	4.5V, 10V
Rds On(Max) @ Id Vgs	90mOhm @ 2A, 1.8V	60mOhm @ 3.2A, 10V
Vgs(th)(Max) @ Id	900mV @ 250µA	2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	15 nC @ 4.5 V	6.7 nC @ 10 V
Vgs(Max)	±8V	±20V
Input Capacitance(Ciss)(Max) @ Vds	-	235 pF @ 15 V
Power Dissipation (Max)	350mW (Ta)	1.1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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