STF10N105K5 vs STF10LN80K5

This in-depth comparison of the STF10N105K5 and STF10LN80K5 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

STF10N105K5

STMicroelectronics

Lifecycle
Active
Stock
5541 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Part B

STF10LN80K5

STMicroelectronics

Lifecycle
Active
Stock
1313 PCS
Package
TO-220FP
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification STF10N105K5 STF10LN80K5
Series MDmesh™ K5 MDmesh™
Part Status Active Active
Base Product Number STF10 -
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1050 V 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 10V -
Vgs(th) (Max) @ Id 5V @ 100µA -
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V -
Vgs (Max) 30V -
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 100 V -
Power Dissipation (Max) 30W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Packaging Tube -
Current - Continuous Drain(Id) @ 25°C - 8A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 10V
Rds On(Max) @ Id Vgs - 630mOhm @ 4A, 10V
Vgs(th)(Max) @ Id - 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs - 15 nC @ 10 V
Vgs(Max) - ±30V
Input Capacitance(Ciss)(Max) @ Vds - 427 pF @ 100 V