STF10NM60N vs STF1060
This in-depth comparison of the STF10NM60N and STF1060 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220F
TO-220-2
Description
MOSFET N-CH 600V 10A TO220FP
DIODE SCHOTTKY 60V ITO220AC
Supplier
-
SMC Diode Solutions
ProductStatus
Active
Active
DiodeType
-
Schottky
Voltage-DCReverse(Vr)(Max)
-
60 V
Voltage-Forward(Vf)(Max)@If
-
650 mV @ 10 A
Speed
-
Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr
-
850 µA @ 60 V
MountingType
Through Hole
Through Hole
Series
MDmesh™ II
-
FETType
N-Channel
-
Technology
MOSFET (Metal Oxide)
-
DraintoSourceVoltage(Vdss)
600 V
-
Current-ContinuousDrain(Id)@25°C
10A (Tc)
-
DriveVoltage(MaxRdsOnMinRdsOn)
10V
-
RdsOn(Max)@IdVgs
550mOhm @ 4A, 10V
-
Vgs(th)(Max)@Id
4V @ 250µA
-
GateCharge(Qg)(Max)@Vgs
19 nC @ 10 V
-
Vgs(Max)
±25V
-
InputCapacitance(Ciss)(Max)@Vds
540 pF @ 50 V
-
PowerDissipation(Max)
25W (Tc)
-
OperatingTemperature
-55°C ~ 150°C (TJ)
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