STP80NF70 vs STP80NF12

This in-depth comparison of the STP80NF70 and STP80NF12 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

STP80NF70

STMicroelectronics

Lifecycle: Active
Stock: 6041 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

STP80NF12

STMicroelectronics

Lifecycle: Active
Stock: 7528 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	STP80NF70	STP80NF12
Series	STripFET™ II	STripFET™ II
Part Status	Not For New Designs	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	68 V	120 V
Current - Continuous Drain(Id) @ 25°C	98A (Tc)	80A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	9.8mOhm @ 40A, 10V	18mOhm @ 40A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	75 nC @ 10 V	189 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	2550 pF @ 25 V	4300 pF @ 25 V
Power Dissipation (Max)	190W (Tc)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

Compare RFQ