STPSC1006D vs STPSC1006G-TR
This in-depth comparison of the STPSC1006D and STPSC1006G-TR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220-2
TO-263-3
Description
DIODE SCHOTTKY 600V 10A TO220AC
DIODE SILICON 600V 10A D2PAK
Supplier
STMicroelectronics
STMicroelectronics
ProductStatus
Active
Obsolete
DiodeType
Silicon Carbide Schottky
Silicon Carbide Schottky
Voltage-DCReverse(Vr)(Max)
600 V
600 V
Current-AverageRectified(Io)
10A
10A
Voltage-Forward(Vf)(Max)@If
1.75 V @ 10 A
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
No Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr)
0 ns
0 ns
Current-ReverseLeakage@Vr
300 µA @ 600 V
150 µA @ 600 V
Capacitance@VrF
650pF @ 0V, 1MHz
650pF @ 0V, 1MHz
MountingType
Through Hole
Surface Mount
