TPS28225DR vs TPS28226D Comparison

This in-depth comparison of the TPS28225DR and TPS28226D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
TPS28225DR

+BOM

7585 PCS | Texas Instruments
TPS28226D

+BOM

3765 PCS | Texas Instruments
Package SOIC-8
Description IC GATE DRVR HALF-BRIDGE 8SOIC IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status Active Active
Driven Configuration Half-Bridge Half-Bridge
Channel Type Synchronous Synchronous
Number of Drivers 2 2
Gate Type MOSFET (N-Channel) N-Channel MOSFET
Voltage - Supply 4.5V ~ 8.8V 6.8V ~ 8.8V
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) - 33 V
Rise / Fall Time(Typ) - 10ns, 10ns
Operating Temperature -40°C ~ 125°C (TJ) -40°C ~ 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number TPS28225 -
Digi Key Programmable Not Verified -
Logic Voltage - VIL, VIH 0.8V, 2.1V -
Current - Peak Output (Source, Sink) 2A, 2A -
Rise / Fall Time (Typ) 10ns, 10ns -
Packaging Cut Tape (CT), Tape & Reel (TR) -
High Side Voltage - Max (Bootstrap) 33 V -
Comparison Model : TPS28225DR TPS28226D

+BOM RFQ