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1N8026-GA
+BOMDIODE SILICON 1.2KV 8A TO257
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #1N8026-GA
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Datasheet 1N8026-GA DataSheet
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Package TO-257-3
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In Stock4813
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 2.5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
| Capacitance @ Vr F | 237pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-257 |
