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2N7000TA
+BOMMOSFET N-CH 60V 200MA TO92-3
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Manufactureronsemi
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Mfr. Part #2N7000TA
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Datasheet 2N7000TA DataSheet
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In Stock15122
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Specifications
| Attribute | Value |
| Supplier | onsemi |
| Package / Case | Cut Tape (CT),Tape & Box (TB) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 1mA |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 400mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
Overview
Description
Packaged in a TO-92 form factor, the 2N7000TA is compact and easy to integrate into various circuit designs. It is characterized by a gate threshold voltage (V_GS(th)) range of 0.8V to 3V, allowing it to be driven directly by microcontrollers and logic level ICs. This MOSFET is ideal for applications such as relay drivers, LED drivers, and low-power switching.
The "TA" suffix indicates that the part is typically supplied in tape and reel packaging, beneficial for automated assembly processes. Its reliability, availability, and straightforward usage make the 2N7000TA a staple component in many electronic projects and consumer products.
Equivalent
- BS170
- BSS138
- 2N7002
- VN10LM
- IRLML2502
These alternatives might have slight variations in specifications, so it's essential to check the datasheets to ensure compatibility with your specific application.
Features
1. Vds (Drain-Source Voltage): It can handle up to 60V, making it suitable for various voltage applications.
2. Id (Continuous Drain Current): The MOSFET can deliver up to 200mA, ideal for low to moderate current needs.
3. Rds(on) (Drain-Source On-Resistance): It has a low on-resistance of approximately 1.2Ω, ensuring efficient current flow and minimal power loss.
4. Vgs (Gate-Source Voltage): Operates typically at ±20V, providing flexibility in control voltage levels.
5. Threshold Voltage: Between 2.1V to 3V, indicating the voltage required to turn the MOSFET on.
6. TO-92 Package: Compact, making it easy to integrate into various circuit boards.
7. Temperature Range: It operates effectively from -55°C to +150°C, suitable for diverse environmental conditions.
These features make the 2N7000TA versatile for digital and analog switching applications in consumer electronics, automotive, and industrial systems.
Pinout
1. Gate (G): This pin is responsible for controlling the flow of current between the source and drain. A voltage applied to the gate controls the conductivity of the MOSFET.
2. Source (S): This is the terminal through which the carriers enter the channel. For an N-channel MOSFET like the 2N7000, the source is usually connected to the ground in a common-source configuration.
3. Drain (D): This is the terminal through which the carriers leave the channel. The current flows from drain to source when the MOSFET is on.
The 2N7000 is used for switching applications and interfacing low-current circuits with higher power loads. Its compact size and efficient operation make it ideal for various applications.
Manufacturer
Application
1. Switching Circuits: Used for switching loads such as relays, LEDs, or small motors.
2. Signal Amplification: Acts as an amplifier in audio and RF applications.
3. Voltage Level Shifting: Converts logic levels between different voltage domains.
4. Analog Circuits: Used in analog switches and multiplexers.
5. Microcontroller Interfacing: Serves as an interface between microcontrollers and higher power components.
6. Battery-Powered Devices: Ideal for low-power and battery-operated applications due to its efficient switching.